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Small-scale vacuum installation for plasma-chemical deposition of dielectric layers under reduced pressure



Deposition of alloyed and unalloyed dielectric silicon oxide layers and silicon nitride layers under reduced pressure with plasma activation of reagents.

Special characteristics:

  • Group processing of 30 substrates up to Ø 100 mm;
  • Quartz reactor with temperature-controlled working area;
  • Working temperature range 200 – 500 °C;
  • Working gases – PH3, N2O, O2,NH3, SiH4, N2;
  • Microprocessing control system;
  • Forvacuum pumping system;
  • Consumed power not more than 7 kW;
  • The ability to embed into clean room;
  • 2 m2area per one plant.




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