Small-scale vacuum installation for plasma-chemical deposition of dielectric layers under reduced pressure

IZOPLAZ TM 1

Purpose:

Deposition of alloyed and unalloyed dielectric silicon oxide layers
and silicon nitride layers under reduced pressure
with plasma activation of reagents.

Special characteristics

Scheme

• Group processing of 30 substrates up to Ø 100 mm;
• Quartz reactor with temperature-controlled working area;
• Working temperature range 200 – 500 °C;
• Working gases – PH₃, N₂O, O₂,NH₃, SiH₄, N₂;
• Microprocessing control system;
• Forvacuum pumping system;
• Consumed power not more than 7 kW;
• The ability to embed into clean room;
• 2 m²area per one plant.