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IZOPLAZ TM-1

Small-scale vacuum installation for plasma-chemical deposition of dielectric layers under reduced pressure

изоплазтм1_1

Purpose:

Deposition of alloyed and unalloyed dielectric silicon oxide layers and silicon nitride layers under reduced pressure with plasma activation of reagents.

Special characteristics:

  • Group processing of 30 substrates up to Ø 100 mm;
  • Quartz reactor with temperature-controlled working area;
  • Working temperature range 200 – 500 °C;
  • Working gases – PH3, N2O, O2,NH3, SiH4, N2;
  • Microprocessing control system;
  • Forvacuum pumping system;
  • Consumed power not more than 7 kW;
  • The ability to embed into clean room;
  • 2 m2area per one plant.

 

 

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