Small-scale vacuum installation for gas-phase film deposition under reduced pressure

IZOTRON TM 1

Purpose:

Gas-phase deposition of silicon oxide and hydride layers under reduced pressure.

Special characteristics

Scheme

• Group processing of 30 substrates up to Ø 100 mm;
• Quartz reactor with temperature-controlled working area;
• Working temperature range 300-900°C;
• Microprocessing control system;
• Working gases – N₂, O₂,NH₃, SiH₄, Ar;
• Forvacuum pumping system;
• Consumed power not more than 12 kW;
• The ability to embed into clean room;
• 2 m²area per one plant.