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RUS
RESEARCH INSTITUTE OF PRECISION MACHINE MANUFACTURING
About company
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IZOTRON TM-1
Small-scale vacuum installation for gas-phase film deposition under reduced pressure
IZOTRON TM 1
Purpose:
Gas-phase deposition of silicon oxide and hydride layers under reduced pressure.
Special characteristics
Scheme
Group processing of 30 substrates up to Ø 100 mm;
Quartz reactor with temperature-controlled working area;
Working temperature range 300-900°C;
Microprocessing control system;
Working gases – N
2
, O
2
,NH
3
, SiH
4
, Ar;
Forvacuum pumping system;
Consumed power not more than 12 kW;
The ability to embed into clean room;
2 m
2
area per one plant.