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IZOTRON TM-1

 изотронтм1

Small-scale vacuum installation for gas-phase film deposition under reduced pressure

IZOTRON TM 1

Purpose:

Gas-phase deposition of silicon oxide and hydride layers under reduced pressure.

изотронтм2

Special characteristics

Scheme

  • Group processing of 30 substrates up to Ø 100 mm;
  • Quartz reactor with temperature-controlled working area;
  • Working temperature range 300-900°C;
  • Microprocessing control system;
  • Working gases – N2, O2,NH3, SiH4, Ar;
  • Forvacuum pumping system;
  • Consumed power not more than 12 kW;
  • The ability to embed into clean room;
  • 2 m2area per one plant.

 

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