+7 (495) 229-7501    |    info@niitm.ru    |        |    RUS

IZOTRON TM-1

Small-scale vacuum installation for gas-phase film deposition under reduced pressure

изотронтм1_1

Purpose:

Gas-phase deposition of silicon oxide and hydride layers under reduced pressure.

Special characteristics:

  • Group processing of 30 substrates up to Ø 100 mm;
  • Quartz reactor with temperature-controlled working area;
  • Working temperature range 300-900°C;
  • Microprocessing control system;
  • Working gases – N2, O2,NH3, SiH4, Ar;
  • Forvacuum pumping system;
  • Consumed power not more than 12 kW;
  • The ability to embed into clean room;
  • 2 m2area per one plant.

изотронтм1_3   izotrontm

9c58e38e9870c3807495c61427c56ed5  Download PDF