Small-scale vacuum installation
for plasma-chemical film deposition
from gas phase with ICP source

MVU TM IZOPHAZE 02

Purpose:

Deposition of dielectric materials from gas phase with plasma activation in HF discharge.

Special characteristics

Scheme

• Table working surface – Ø 180 mm;
• Reactor with ICP plasma source;
• Regulation and automatic control of HF ICP plasma source power level within the range of 30-200 W;
• Substrate heating up to 400 °C;
• Forevacuum pumping system;
• Microprocessing control system;
• Consumed power not more than 3 kW;
• Oil-free pumping system (turbomolecular pumps 300 l/h);
• 2,5 m² area per one plant.