Small-scale vacuum installation for reactive-ion etching of films
Etching of thin dielectric and metal films and semiconducting materials by reactive-ion etching.
- Working surface of HF electrode table – Ø 180 mm;
- Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
- Regulation and automatic control of HF power level within the range of 30-200 W;
- Working gases – Ar, SF6, O2, CF4;
- Forvacuum pumping system;
- Microprocessing control system;
- Consumed power not more than 3 kW;
- 2,5 m2 area per one plant.