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RUS
RESEARCH INSTITUTE OF PRECISION MACHINE MANUFACTURING
About company
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MVU TM PLASMA 01
Small-scale vacuum installation for reactive-ion etching of films
MVU TM PLASMA 01
Purpose:
Etching of thin dielectric and metal films and semiconducting materials by reactive-ion etching.
Special characteristics
Scheme
Working surface of HF electrode table – Ø 180 mm;
Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
Regulation and automatic control of HF power level within the range of 30-200 W;
Working gases – Ar, SF
6
, O
2
, CF
4
;
Forvacuum pumping system;
Microprocessing control system;
Consumed power not more than 3 kW;
2,5 m
2
area per one plant.