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MVU TM PLASMA 01

Small-scale vacuum installation for reactive-ion etching of films

мву_тм_плазма01_1

Purpose:

Etching of thin dielectric and metal films and semiconducting materials by reactive-ion etching.

Special characteristics:

  • Working surface of HF electrode table – Ø 180 mm;
  • Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
  • Regulation and automatic control of HF power level within the range of 30-200 W;
  • Working gases – Ar, SF6, O2, CF4;
  • Forvacuum pumping system;
  • Microprocessing control system;
  • Consumed power not more than 3 kW;
  • 2,5 m2 area per one plant.

мву_тм_плазма01_3   mvuplasma1

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