Small-scale vacuum installation for reactive-ion etching of films

MVU TM PLASMA 01

Purpose:

Etching of thin dielectric and metal films and semiconducting materials by reactive-ion etching.

Special characteristics

Scheme

• Working surface of HF electrode table – Ø 180 mm;
• Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
• Regulation and automatic control of HF power level within the range of 30-200 W;
• Working gases – Ar, SF₆, O₂, CF₄;
• Forvacuum pumping system;
• Microprocessing control system;
• Consumed power not more than 3 kW;
• 2,5 m² area per one plant.