+7 (495) 229-7501    |    info@niitm.ru    |        |    RUS

MVU TM PLASMA 01

 мву тм плазма 01-1

Small-scale vacuum installation for reactive-ion etching of films

MVU TM PLASMA 01

Purpose:

Etching of thin dielectric and metal films and semiconducting materials by reactive-ion etching.

мву тм плазма 01-2

Special characteristics

Scheme

  • Working surface of HF electrode table – Ø 180 mm;
  • Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
  • Regulation and automatic control of HF power level within the range of 30-200 W;
  • Working gases – Ar, SF6, O2, CF4;
  • Forvacuum pumping system;
  • Microprocessing control system;
  • Consumed power not more than 3 kW;
  • 2,5 m2 area per one plant.
 mvuplasma1