Small-scale vacuum installation for plasma-chemical etching of films with diode system

MVU TM PLASMA 02

Purpose:

Plasma-chemical selective etching of dielectric and metal films.

Special characteristics

Scheme

• Table working surface– Ø 180 mm;
• Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
• Regulation and automatic control of HF power level of gas shower within the range of 30-200 W;
• Working gases – Ar, SF₆, O₂, CF₄;
• Forvacuum pumping system;
• Microprocessing control system;
• Consumed power not more than 3 kW;
• 2,5 m² area per one plant.