Small-scale vacuum installation for plasma-chemical etching of films with ICP source

MVU TM PLASMA 03

Purpose:

Plasma-chemical selective (reactive-ion, anisotropic) etching of dielectric and metal films.

Special characteristics

Scheme

• Working surface of HF electrode table – Ø 180 mm;
• Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
• Regulation and automatic control of HF electrode power level within the range of 30-200 W;
• Working gases – Ar, SF₆, O₂, CF₄;
• Regulation and automatic control of HF power level of ICP source within the range of 400-600 W;
• Oil-free pumping system (turbomolecular pumps 300 l/h);
• Microprocessing control system;
• Consumed power not more than 3 kW;
• 2,5 m² area per one plant.