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MVU TM PLASMA 03

Small-scale vacuum installation for plasma-chemical etching of films with ICP source

мву_тм_плазма03_1

Purpose:

Plasma-chemical selective (reactive-ion, anisotropic) etching of dielectric and metal films.

Special characteristics:

  • Working surface of HF electrode table – Ø 180 mm;
  • Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
  • Regulation and automatic control of HF electrode power level within the range of 30-200 W;
  • Working gases – Ar, SF6, O2, CF4;
  • Regulation and automatic control of HF power level of ICP source within the range of 400-600 W;
  • Oil-free pumping system (turbomolecular pumps 300 l/h);
  • Microprocessing control system;
  • Consumed power not more than 3 kW;
  • 2,5 m2 area per one plant.

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