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MVU TM PLASMA 06

Vacuum installation for deep anisotropic etching

МВУ тм Плазма 06

 

Purpose:

Deep anisotropic etching of silicon plates.

Special characteristics:

  • Working surface of HF electrode table – Ø 180 mm;
  • Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
  • Regulation and automatic control of HF electrode-substrate holder power level within the range of 30-200 W;
  • Working gases – Ar, SF6, O2, C4F8;
  • Regulation and automatic control of HF power level of ICP source within the range of 400-600 W;
  • Oil-free pumping system (turbomolecular pumps 300 l/h);
  • Microprocessing control system;
  • Consumed power not more than 3 kW;
  • 2,5 marea per one plant.

  мвутмплазма6

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