+7 (495) 229-7501    |    info@niitm.ru    |        |    RUS

MVU TM PLASMA 06

мву тм плазма 06-1

Vacuum installation for deep anisotropic etching

MVU TM PLASMA 06

Purpose:

Deep anisotropic etching of silicon plates.

мву тм плазма 06-2

Special characteristics

Scheme

  • Working surface of HF electrode table – Ø 180 mm;
  • Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
  • Regulation and automatic control of HF electrode-substrate holder power level within the range of 30-200 W;
  • Working gases – Ar, SF6, O2, C4F8;
  • Regulation and automatic control of HF power level of ICP source within the range of 400-600 W;
  • Oil-free pumping system (turbomolecular pumps 300 l/h);
  • Microprocessing control system;
  • Consumed power not more than 3 kW;
  • 2,5 marea per one plant.
мвутмплазма6