NVU TM PLASMA 01

Desktop vacuum installation for films etching by reactive-ion etching

Purpose:

Etching of thin dielectric and metal films and semiconducting materials by reactive-ion etching.

Special characteristics:

• Table working surface – Ø 116 mm (80 x 80);
• Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
• Regulation and automatic control of HF power level within the range of 30-200 W;
• Working gases – Ar, SF₆, O₂, CF₄;
• Oil-free pumping system (turbomolecular pumps 60 l/h);
• Automated control;
• Consumed power not more than 3 kW;
• 1,5 m² area per one plant.

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