Small-scale installation for thermal processing of plates and materials in vacuum or gas environment
Purpose:
Automatic thermal processing of silicon plates, ceramic wafers and materials (annealing, drying, diffusant rectification, reconstruction of crystal structures) in high vacuum or gas environment.
Special characteristics:
- Group processing of 25 substrates up to Ø 100 mm or ceramic wafers;
- Quartz reactor with sealed working area of 700 mm;
- Working temperature range 300 – 700 °C;
- Working gases – Ar, H2, O2, N2;
- Increased rate of heating and cooling;
- Oil-free pumping system (turbomolecular pumps 300 l/h);
- Microprocessing control system;
- Consumed power not more than 5 kW;
- The ability to embed into clean room;
- 1,2 m2 area per one plant.
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