+7 (495) 229-7501    |    info@niitm.ru    |        |    RUS


Small-scale installation for thermal processing of plates and materials in vacuum or gas environment



Automatic thermal processing of silicon plates, ceramic wafers and materials (annealing, drying, diffusant rectification, reconstruction of crystal structures) in high vacuum or gas environment.

Special characteristics:

  • Group processing of 25 substrates up to Ø 100 mm or ceramic wafers;
  • Quartz reactor with sealed working area of 700 mm;
  • Working temperature range 300 – 700 °C;
  • Working gases – Ar, H2, O2, N2;
  • Increased rate of heating and cooling;
  • Oil-free pumping system (turbomolecular pumps 300 l/h);
  • Microprocessing control system;
  • Consumed power not more than 5 kW;
  • The ability to embed into clean room;
  • 1,2 m2 area per one plant.

отжигтм-5_3   отжиг5

9c58e38e9870c3807495c61427c56ed5  Download PDF