Small-scale installation for thermal processing of plates and materials in gas environment
Purpose:
Automatic thermal processing of silicon plates and materials in gas environment (annealing, drying, diffusant rectification, reconstruction of crystal structures) at standard pressure.
Special characteristics:
- Quartz reactor with sealed working area;
- Working temperature range 300 – 1100 °C;
- Working gases – Ar, H2, N2;
- Microprocessing control system;
- Consumed power not more than 5 kW;
- The ability to embed into clean room;
- 1,5 m2 area per one plant.
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