Small-scale installation for thermal processing of plates and materials in gas environment
Automatic thermal processing of silicon plates and materials in gas environment (annealing, drying, diffusant rectification, reconstruction of crystal structures) at standard pressure.
- Quartz reactor with sealed working area;
- Working temperature range 300 – 1100 °C;
- Working gases – Ar, H2, N2;
- Microprocessing control system;
- Consumed power not more than 5 kW;
- The ability to embed into clean room;
- 1,5 m2 area per one plant.