Small-scale installation for thermal processing of plates and materials in gas environment

OTJIG TM 6

Purpose:

Automatic thermal processing of silicon plates and materials in gas environment (annealing, drying, diffusant rectification, reconstruction of crystal structures) at standard pressure.

Special characteristics

Scheme

• Quartz reactor with sealed working area;
• Working temperature range 300 – 1100 °C;
• Working gases – Ar, H₂, N₂;
• Microprocessing control system;
• Consumed power not more than 5 kW;
• The ability to embed into clean room;
• 1,5 m² area per one plant.