PLASMA TM 200

Vacuum installations for plasma-chemical etching of films with ICP source and load lock

Purpose:

Selective plasma-chemical etching (reactive- ion, anisotropic) of dielectric and metal films.

Special characteristics:

• Group processing of substrates in one technological cycle: 60 x 48 mm – 3 pcs., Ø 76, 100, 150, 200 mm – 1 pc.;
• Lock-chamber for loading and unloading of substrates;
• Substrate transfer system from lock chamber to working chamber by manipulator;
• Working gases – Ar, SF₆, O2, CF₄;
• Rotary HF electrode with substrate cooling;
• Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
• Regulation and automatic control of HF power level of ICP source within the range of 400-600 W;
• Oil-free (dry) pumping system (forvacuum and turbomolecular pumps);
• Microprocessing control system;
• Consumed power not more than 7 kW;
• 5 m² area per one plant.

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