Installation for epitaxial layers overgrowth with the individual processing of plates up to ø200 mm
Deposition of epitaxial layers of silicon and germanium onto single-crystal silicon and sapphire substrates.
- Quartz horizontal slit-type reactor with controlled gas dynamics;
- Ø 100, 150, 200 mm substrate loading;
- IR heating with a temperature control of 5 areas;
- Microprocessing control system;
- Consumed power not more than 70 kW;
- 10 m2 area per one plant.