Installation for gas-phase growing of epitaxial layers with substrates group processing

EPIKVAR TM

Purpose:

Gas-phase deposition of mono- and polycrystalline silicon layers in a wide range of thicknesses and resistivity on single-crystal silicon or sapphire substrates by the chloride or chloride-hydride method.

Special characteristics

Installation scheme

• Cylindrical quartz reactor with induction-radiation heating of substrates;

• Evaporator (bubbler) of silicon-containing substance;

• System for continuous supply of silicon-containing substances (tank);

• Manual loading / unloading of wafers;

• Graphite substrate holder for 24 wafers Ø100 mm;

• Microprocessor control system;

• Frequency converter for power supply of the inductor up to 160 kW and an operating frequency of 8 kHz;

• Liquid scrubber for neutralizing waste products;

• Working gases: SiCl₄, H₂, N₂, HCl;

• Power consumption is not more than 160 kW.