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EPI ETM-I 200

Installation for epitaxial layers overgrowth with the individual processing of plates up to ø200 mm

эпиетми200

Purpose:

Deposition of epitaxial layers of silicon and germanium onto single-crystal silicon and sapphire substrates.

Special characteristics:

  • Quartz horizontal slit-type reactor with controlled gas dynamics;
  • Ø 100, 150, 200 mm substrate loading;
  • IR heating with a temperature control of 5 areas;
  • Microprocessing control system;
  • Consumed power not more than 70 kW;
  • 10 m2 area per one plant.

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