Deposition of super-thick polycrystalline silicon layers from a solid source onto single-crystal silicon or sapphire substrates.
Cylindrical quartz reactor with induction-radiation heating of substrates;
Manual loading / unloading of wafers;
Graphite substrate holder for 3 wafers Ø100 mm;
Microprocessor control system;
Frequency converter for power supply of the inductor up to 60 kW and an operating frequency of 22 kHz;
Liquid scrubber for neutralizing waste products;
Working gases: N₂, H₂, HCl;
Power consumption is not more than 60 kW.