Small-sized installation for gas-phase growing of epitaxial layers

EPISEND TM

Purpose:

Deposition of super-thick polycrystalline silicon layers from a solid source onto single-crystal silicon or sapphire substrates.

Special characteristics

Installation scheme

• Cylindrical quartz reactor with induction-radiation heating of substrates;

• Manual loading / unloading of wafers;

• Graphite substrate holder for 3 wafers Ø100 mm;

• Microprocessor control system;

• Frequency converter for power supply of the inductor up to 60 kW and an operating frequency of 22 kHz;

• Liquid scrubber for neutralizing waste products;

• Working gases: N₂, H₂, HCl;

• Power consumption is not more than 60 kW.