Installation for epitaxial layers overgrowth with group plates processing
Purpose:
Epitaxial deposition of silicon layers in a wide range of thicknesses and resistivity onto single-crystal silicon or sapphire wafers by chloride or chloride hydride deposition from the gas phase.
Special characteristics:
- Quartz cylinder-type reactor with inductive and radiating plates heating;
- High-precision evaporator of silicon reagent;
- Unlimited life cycle of quartz reactor;
- Consumed power not more than 100 kW;
- 10 m2 area per one plant.
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