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Installation for epitaxial layers overgrowth with group plates processing



Epitaxial deposition of silicon layers in a wide range of thicknesses and resistivity onto single-crystal silicon or sapphire wafers by chloride or chloride hydride deposition from the gas phase.

Special characteristics:

  • Quartz cylinder-type reactor with inductive and radiating plates heating;
  • High-precision evaporator of silicon reagent;
  • Unlimited life cycle of quartz reactor;
  • Consumed power not more than 100 kW;
  • 10 marea per one plant.

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