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IZOPHAZE TM 200-01

изофаз тм 200-01_1

Vacuum installation for plasma-chemical film deposition from gas phase with ICP source and the load lock

IZOPHAZE TM 200-01

Purpose:

Atomic layer deposition of ultrathin films.  

изофаз тм 200-01_2

Special characteristics

Scheme

  • Group and individual treatment of substrates in one production cycle:
    60х48 mm – 7 pcs; Ø 76 mm – 4 pcs; 156х156 mm – 1 pcs;
    Ø 50 mm – 11 pcs; Ø 100 mm – 2 pcs; Ø 150, 200 mm – 1 pcs;
  • Lock-chamber for loading and unloading substrates;
  • Substrate transfer system from lock chamber to working chamber by manipulator;
  • Reactor with a remote ICP plasma source;
  • Substrate heating up to 400°C;  
  • Deposition thermal mode and mode with a remote ICP plasma source;
  • Ports to connect the vials with the precursor: with high vapor pressure – 2 pcs; low vapor pressure – 2 pcs (optional number of ports up to 4 pieces)
  • Oil-free (dry) pumping system (forvacuum and turbomolecular pumps);
  • Microprocessor control system;
  • Power consumption is not more than 5 kWt;
  • Ability to build in a clean room;
  • 5m² area per plant.

 

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