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Vacuum installation for plasma-chemical film deposition from gas phase with ICP source and the load lock


Atomic layer deposition of ultrathin films.  

Special characteristics:

  • Individual treatment of substrates in one production cycle: Ø 100, 150, 200 mm — 1 pcs.
  • Lock-chamber for loading and unloading substrates from cassette to cassette;
  • Substrate transfer system from lock chamber to working chamber by manipulator;
  • Reactor with a remote ICP plasma source;
  • Substrate heating up to 400°C;
  • Deposition in the thermal mode and mode with a remote ICP plasma source;
  • Ports to connect the vials with the precursor: with high vapor pressure – 2 pcs; low vapor pressure – 2 pcs (optional number of ports up to 4 pieces)
  • Oil-free (dry) pumping system (forvacuum and turbomolecular pumps);
  • Microprocessor control system;
  • Power consumption is not more than 5 kW;
  • Ability to build in a clean room;
  • 5m² area per plant.










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