Vacuum installation for plasma-chemical film deposition from gas phase with ICP source and the load lock

IZOPHAZE TM 200-01K

Purpose:

Atomic layer deposition of ultrathin films.  

Special characteristics

Scheme

• Individual treatment of substrates in one production cycle: Ø 100, 150, 200 mm — 1 pcs.
• Lock-chamber for loading and unloading substrates from cassette to cassette;
• Substrate transfer system from lock chamber to working chamber by manipulator;
• Reactor with a remote ICP plasma source;
• Substrate heating up to 400°C;
• Deposition in the thermal mode and mode with a remote ICP plasma source;
• Ports to connect the vials with the precursor: with high vapor pressure – 2 pcs; low vapor pressure – 2 pcs (optional number of ports up to 4 pieces)
• Oil-free (dry) pumping system (forvacuum and turbomolecular pumps);
• Microprocessor control system;
• Power consumption is not more than 5 kW;
• Ability to build in a clean room;
• 5m² area per plant.