4-position vacuum installation for film deposition by magnetron sputtering
Deposition of multicomponent and multilayer metal or dielectric thin films on substrates (plates) by magnetron sputtering.
- 2 magnetron sputtering devices;
- processing in one technological cycle (one-sided): 60 x 48 mm –17 pc.;
- Substrate heating up to 300° C;
- Control of resistive film thickness by resistance;
- Preliminary substrate heating and cleaning by ion source;
- Ion sources – 1 pc.;
- Oil-free pumping system (turbomolecular pump);
- Microprocessing control system;
- Consumed power not more than 4,5 kW;
- 3 m2 area per one plant.