Vacuum installation for plasma-chemical films etching with ICP source and lock-chamber

PLASMA TM 200-01

Purpose:

Deep plasma-chemical anisotropic etching of silicon, high-speed etching of semiconductor wafers in the manufacture of a MEMS NEMS, 2.5 D and 3D assemblies, and high aspect holes etc. on the basis of the Bosch-process.

Special characteristics

Scheme

• Individual and group treatment of substrates in a single process cycle: 60х48 mm – 7 pcs; Ø 76mm – 4 pcs; 156х156 mm – 1 pcs; Ø 50 mm – 11 pcs; Ø 100 mm – 2 pcs; Ø 150, 200 mm – 1 pcs;
• Lock-chamber for loading and unloading substrates;
• Substrate transfer system from lock chamber to working chamber by manipulator;
• Heating of the walls of the reactor to 60°C;
• Working gases: SF₆, C₄F₈, O₂, Ar, He;
• Speed anisotropic etching of silicon is not less than 5 mkm/min;
• Alternating gas supply with programmable cycle time;
• Oil-free (dry) pumping system (forvacuum and turbomolecular pumps);
• Microprocessor control system;
• Consumed power not more than 12.5 kW;
• Ability to build in a clean room;
• 5m² area per one plant.