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PLASMA TM 200-01

плазма тм 200-01_1

Vacuum installation for plasma-chemical films etching with ICP source and lock-chamber

PLASMA TM 200-01


Deep plasma-chemical anisotropic etching of silicon, high-speed etching of semiconductor wafers in the manufacture of a MEMS NEMS, 2.5 D and 3D assemblies, and high aspect holes etc. on the basis of the Bosch-process.

плазма тм 200-01_2

Special characteristics


  • Individual and group treatment of substrates in a single process cycle: 60х48 mm – 7 pcs; Ø 76mm – 4 pcs; 156х156 mm – 1 pcs; Ø 50 mm – 11 pcs; Ø 100 mm – 2 pcs; Ø 150, 200 mm – 1 pcs;
  • Lock-chamber for loading and unloading substrates;
  • Substrate transfer system from lock chamber to working chamber by manipulator;
  • Heating of the walls of the reactor to 60°C;
  • Working gases: SF₆, C₄F₈, O₂, Ar, He;
  • Speed anisotropic etching of silicon is not less than 5 mkm/min;
  • Alternating gas supply with programmable cycle time;
  • Oil-free (dry) pumping system (forvacuum and turbomolecular pumps);
  • Microprocessor control system;
  • Consumed power not more than 12.5 kW;
  • Ability to build in a clean room;
  • 5m² area per one plant.