RESEARCH INSTITUTE OF PRECISION MACHINE MANUFACTURING
PLASMA TM 200-01K
Vacuum installation for plasma-chemical films etching with ICP source and lock-chamber
PLASMA TM 200-01k
Deep plasma-chemical anisotropic etching of silicon, high-speed etching of semiconductor
wafers in the manufacture of a MEMS NEMS, 2.5 D and 3D assemblies, and high aspect holes etc. on the basis of the Bosch-process.
Individual processing of substrates in one production cycle: Ø 100, 150, 200 mm – 1 pc.
Lock-chamber for loading and unloading substrates from the cassette to cassette;
Substrate transfer system from lock chamber to working chamber by manipulator;
Heating of the walls of the reactor to 60°C;
Working gases: Ar, SF₆, O₂, C₄F₈, He;
Speed anisotropic etching of silicon is not less than 5 mkm/min;
Alternating gas supply with programmable cycle time;
Oil-free (dry) pumping system (forvacuum and turbomolecular pumps);
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