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PLASMA TM 200-02

Vacuum installation for plasma-chemical films etching with ICP source and lock-chamber

Purpose:

Plasma-chemical etching of polycrystalline silicon and silicon nitride (Microsemi isolation in silicon).

Special characteristics:

  • Individual and group treatment of substrates in a single process cycle: 60х48 mm – 7 pcs; Ø 76 mm – 4 pcs; 156х156 mm – 1 pcs; Ø 50 mm – 11 pcs; Ø 100 mm – 2 pcs; Ø 150, 200 mm – 1 pcs;
  • Lock-chamber for loading and unloading substrates;
  • Transport system for transferring substrates from the lock chamber into the working chamber by manipulator;
  • Working gases: Cl₂, HBr, SF₆, O₂, CF₄, He, N₂;
  • Helium cooling and mechanical clamping plates;
  • Oil-free (dry) pumping system (forvacuum and turbomolecular pumps);
  • Microprocessor control system;
  • Consumed power not more than 12.5 kW;
  • Ability to build in a clean room;
  • 5m² area per one plant.

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