Vacuum installation for plasma-chemical films etching with ICP source and load lock

PLASMA TM 200-02K

Purpose:

Plasma-chemical etching of polycrystalline silicon and silicon nitride (Shallow Trench Isolation in silicon).

Special characteristics

Scheme

• Individual treatment of substrates in one production cycle: Ø 100, 150, 200 mm – 1 pcs;
• Lock-chamber for loading and unloading substrates from the cassette to cassette;
• Transport system for transferring substrates from the lock chamber into the working chamber by manipulator;
• Working gases: Cl₂, HBr, SF₆, O₂, CF₄, He, N₂;
• Heating walls of the reactor to 60°C;
• Speed anisotropic etching of silicon is not less than 5 mkm/min;
• Alternating gas supply with programmable cycle time;
• Oil-free (dry) pumping system (forvacuum and turbomolecular pumps);
• Microprocessor control system;
• Power consumtion is not more than 12.5 kW;
• Ability to build in a clean room;
• 5m² area per one plant.