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PLASMA TM 200-02K

Vacuum installation for plasma-chemical films etching with ICP source and load lock

плазма-200-01к-1

Purpose:

Plasma-chemical etching of polycrystalline silicon and silicon nitride (Shallow Trench Isolation in silicon).

Special characteristics:

  • Individual treatment of substrates in one production cycle: Ø 100, 150, 200 mm – 1 pcs;
  • Lock-chamber for loading and unloading substrates from the cassette to cassette;
  • Transport system for transferring substrates from the lock chamber into the working chamber by manipulator;
  • Working gases: Cl₂, HBr, SF₆, O₂, CF₄, He, N₂;
  • Heating walls of the reactor to 60°C;
  • Speed anisotropic etching of silicon is not less than 5 mkm/min;
  • Alternating gas supply with programmable cycle time;
  • Oil-free (dry) pumping system (forvacuum and turbomolecular pumps);
  • Microprocessor control system;
  • Power consumtion is not more than 12.5 kW;
  • Ability to build in a clean room;
  • 5m² area per one plant.

plasma02k

 

 

 

 

 

 

 

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