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PLASMA TM 7

Vacuum installations for plasma-chemical etching of films with ICP source and load lock

Purpose:

Selective plasma-chemical etching (reactive- ion, anisotropic) of dielectric and metal films.

Special characteristics:

  • Working surface of HF electrode table – Ø 150 mm;
  • Lock-chamber for loading and unloading of Ø 76, 100, 150 mm substrates from one plate holder to another;
  • Substrate transfer system from lock chamber to working chamber by manipulator;
  • Working gases – Ar, SF6, O2, CF4;
  • Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
  • Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
  • Forvacuum pumping system;
  • Microprocessing control system;
  • Consumed power not more than 3 Kw;
  • 2,5 m2 area per one plant.

 

 

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