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RUS
RESEARCH INSTITUTE OF PRECISION MACHINE MANUFACTURING
About company
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PLASMA TM 7
Vacuum installations for plasma-chemical etching of films with ICP source and load lock
PLASMA TM 7
Purpose:
Selective plasma-chemical etching (reactive- ion, anisotropic) of dielectric and metal films.
Special characteristics
Scheme
Working surface of HF electrode table – Ø 150 mm;
Lock-chamber for loading and unloading of Ø 76, 100, 150 mm substrates from one plate holder to another;
Substrate transfer system from lock chamber to working chamber by manipulator;
Working gases – Ar, SF
6
, O
2
, CF
4
;
Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
Forvacuum pumping system;
Microprocessing control system;
Consumed power not more than 3 Kw;
2,5 m
2
area per one plant.