Vacuum installations for plasma-chemical etching of films with ICP source and load lock

PLASMA TM 7

Purpose:

Selective plasma-chemical etching (reactive- ion, anisotropic) of dielectric and metal films.

Special characteristics

Scheme

• Working surface of HF electrode table – Ø 150 mm;
• Lock-chamber for loading and unloading of Ø 76, 100, 150 mm substrates from one plate holder to another;
• Substrate transfer system from lock chamber to working chamber by manipulator;
• Working gases – Ar, SF₆, O₂, CF₄;
• Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
• Measurement of HF displacement on HF electrode-substrate holder within the range of 0-1000 V;
• Forvacuum pumping system;
• Microprocessing control system;
• Consumed power not more than 3 Kw;
• 2,5 m² area per one plant.