BTO TM 200-01
3D
Ion-alloyed layers annealing; ohmic contacts formation; metal silicides, thin oxide and dielectric films production; amorphous and polycrystalline films recrystallization, etc.
Specifications:
The ability to be part of a cluster
—
Yes
Possibility of integration into a clean room
—
Yes
Wafer diameter
—
Up to 100mm, 100mm, 150mm, 200mm
Wafer loading
—
From cassette to cassette, Loadlock, SMIF container
Цена действительна только для интернет-магазина и может отличаться от цен в розничных магазинах
BTO TM 200-01
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Specifications:
- Wafers processing on the work table: Ø 76, 100, 150, 200 mm;
- Wafers transport system based on a manipulator;
- Various versions of the loading system: loadlock, from cassette to cassette, SMIF container;
- Multi-zone IR heating of wafers up to +1200 °C;
- Maximum heating rate, not less than 100 °C/s;
- Cooling rate from +1200 °C to +700 °C, not less than 35 °C/s;
- Cooling rate from +700 °C to +200 °C, not less than 35 °C/min;
- Wafer rotation unit for increased heating uniformity;
- The working chamber is cooled in the range from +16 °C to +25 °C;
- Oil-free pumping if using a vacuum;
- Possibility of integration into a clean room.
Warranty and post-warranty service;
The possibility of upgrading and reconfiguring equipment to meet customer requirements.