BTO TM 200-01
Ion-alloyed layers annealing; ohmic contacts formation; metal silicides, thin oxide and dielectric films production; amorphous and polycrystalline films recrystallization, etc.
Specifications:
The ability to be part of a cluster
—
Yes
Possibility of integration into a clean room
—
Yes
Wafer diameter
—
Up to 100mm, 150mm, 200mm
Wafer loading
—
From cassette to cassette, Loadlock, SMIF container
Цена действительна только для интернет-магазина и может отличаться от цен в розничных магазинах
BTO TM 200-01
Specifications:
- Wafers processing on the work table: Ø 76, 100, 150, 200 mm;
- Wafers transport system based on a manipulator;
- Various versions of the loading system: loadlock, from cassette to cassette, SMIF container;
- Multi-zone IR heating of wafers to 1200 ° C;
- Maximum heating rate, not less than 100 ° C / s;
- Cooling rate from + 1200 ° C to + 700 ° C, not less than 35 ° C / s;
- Cooling rate from + 700 ° C to + 200 ° C, not less than 35 ° C / min;
- Wafer rotation unit for increased heating uniformity;
- The working chamber is cooled to + 16 ° C ... + 25 ° C;
- Oil-free pumping in case of using a vacuum;
- Possibility of integration into a clean room.
Warranty and post-warranty service;
The possibility of upgrading and reconfiguring equipment to meet customer requirements.