EPIFAZ TM 200-01
Gas-phase deposition from metal-organic compounds for epitaxial growth of heterostructures based on III-N materials for power devices and UHF transistors
Specifications:
Possibility of integration into a clean room
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Yes
Wafer diameter
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Up to 100mm, 150mm, 200mm
Wafer loading
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Manual
Цена действительна только для интернет-магазина и может отличаться от цен в розничных магазинах
EPIFAZ TM 200-01
Specifications:
- Number of simultaneously processed substrates (Si, Al2O3, SiC): 1×200 mm, 1×150 mm, 3×100 mm, 7×76.2 mm, 13×50.8 mm
- Control of the thickness and deflection of the structure during growth (in-situ) to adjust the high uniformity of thicknesses and compositions of layers of solid solutions
- Deposition of high-resistance buffer layers of GaN doped with Fe and C
- Deposition of a passivating Si3N4 coating directly in an epitaxial reactor
- Availability of domestic software that provides control of growth parameters, process safety and analysis of the condition of all elements of the installation
- Operating temperature range up to 1150°C;;
- The power consumption is not more than 80 kW.
Warranty and post-warranty service;
The possibility of upgrading and reconfiguring equipment to meet customer requirements.