MAGNA TM 200-04
Magnetron sputtering of aluminum (Al) metallization, formation of adhesive, barrier (Ta/TaN, Ti/TiN) and nucleated copper (Cu) layers for bridges in contact and via holes of interlayer joints, etc.
Specifications:
The ability to be part of a cluster
—
Yes
Possibility of integration into a clean room
—
Yes
Wafer diameter
—
Up to 100mm, 100mm, 150mm, 200mm
Wafer loading
—
From cassette to cassette, Loadlock, SMIF container
Цена действительна только для интернет-магазина и может отличаться от цен в розничных магазинах
MAGNA TM 200-04
Specifications:
- Wafer processing on the work table: Ø 76, 100, 150, 200 mm;
- Wafers transport system based on a manipulator;
- Various loading system options: loadlock, from cassette to cassette, SMIF container;
- HF work table with vertical transferring, temperature support in the range of -20…+250°C, argon supply under the wafer and clamping;
- Magnetron sputtering device with a rotating magnetic block;
- The mode for deposition films from a Ø 300 mm target in the pulsed mode at power up to 20 kW is provided for deep grooves and holes filling in products;
- Mechanical shutter to protect the wafer working surface;
- System for working chamber walls heating up to +120°C;
- Replaceable screens to prevent working chamber dusting;
- Deposition rate: Cu not less than 5 nm/s; TiN not less than 2 nm/s;
- Possibility of integration into a clean room.
Warranty and post-warranty service;
The possibility of upgrading and reconfiguring equipment to meet customer requirements.