PLASMA TM 200-02
Deep plasma-chemical anisotropic etching of silicon in the MEMS, NEMS, 2.5D and 3D production, as well as through high-aspect holes, etc. based on the Bosch process.
Specifications:
The ability to be part of a cluster
—
Yes
Possibility of integration into a clean room
—
Yes
Wafer diameter
—
Up to 100mm, 150mm, 200mm
Wafer loading
—
From cassette to cassette, Loadlock, SMIF container
Цена действительна только для интернет-магазина и может отличаться от цен в розничных магазинах
PLASMA TM 200-02
- Individual and group processing of substrates or wafers on the work table in one technological cycle: 60x48 mm – 7 pcs.; Ø 76 mm – 4 pcs.; Ø 100, 150, 200 mm – 1 pc.;
- Loadlock chamber for loading and unloading substrates or wafers;
- Wafers transport system from the loadlock chamber to the reactor based on a manipulator;
- The reactor walls heating up to 60 ° C;
- Helium cooling and mechanical clamping of the wafers;
- Working gases: He, SF6, C4F8, O2, Ar and others;
- Silicon anisotropic etching rate is not less than 0.5-1 μm/min;
- Power consumption is not more than 19 kW;
- Oil-free pumping system;
- Possibility of integration into a clean room.
- Loadlock chamber for loading and unloading substrates or wafers;
- Wafers transport system from the loadlock chamber to the reactor based on a manipulator;
- The reactor walls heating up to 60 ° C;
- Helium cooling and mechanical clamping of the wafers;
- Working gases: He, SF6, C4F8, O2, Ar and others;
- Silicon anisotropic etching rate is not less than 0.5-1 μm/min;
- Power consumption is not more than 19 kW;
- Oil-free pumping system;
- Possibility of integration into a clean room.
Warranty and post-warranty service;
The possibility of upgrading and reconfiguring equipment to meet customer requirements.