PLASMA TM 200-04
Atomic layer etching of silicon oxide, silicon and surface cleaning
Specifications:
The ability to be part of a cluster
—
Yes
Possibility of integration into a clean room
—
Yes
Wafer diameter
—
Up to 100mm, 150mm, 200mm
Wafer loading
—
From cassette to cassette, Loadlock, SMIF container
Цена действительна только для интернет-магазина и может отличаться от цен в розничных магазинах
PLASMA TM 200-04
Specifications:
- Wafer processing on the work table: Ø 76, 100, 150, 200 mm;
- Wafers transport system based on a manipulator;
- Various loading system options: loadlock, cassette-to-cassette, SMIF container;
- ICP plasma source with a cylindrical inductor for high-density plasma formation;
- Etching table with temperature maintenance in the range of -30 … +100 °C, with helium supply under the wafer, with a mechanical clamping device and RF bias voltage supply;
- The system for heating the reactor walls, made of aluminum alloy, to +60 °C using built-in heaters;
- SiO2 etching rate, nm/cycle, 0.1…1, Si, nm/cycle, 0.1…1;
- Oil-free pumping system;
- Possibility of integration into a clean room.
Warranty and post-warranty service;
The possibility of upgrading and reconfiguring equipment to meet customer requirements.