CLUSTER TM-300 CVD
3D
The cluster system is designed for plasma chemical deposition (CVD) with up to 65 nm design rules
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Specifications:
Possibility of integration into a clean room
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Yes
Wafer diameter
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200mm, 300mm
Wafer loading
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FOUP container, SMIF container
Developed with the support of the Russian Ministry of Industry and Trade in cooperation with MERI
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Цена действительна только для интернет-магазина и может отличаться от цен в розничных магазинах
CLUSTER TM-300 CVD
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Specifications:
- The size of the processed substrates, Ø mm 200, 300
- The number of simultaneously loaded substrates 1;
- Remote plasma source for chamber clean
- TEOS feed system developed in-house
- Overall dimensions (WxDxH), mm 4570*4580*2500
- Wafers heating temperature, ºС 400
- Operating pressure range, Pa 133 ÷ 1333
- Deposition nonuniformity, % < 2,5
- Maximum generator power, W HF: 2000; LF: 1000
- Wafers heating temperature, ºС 480
- Operating pressure range, Pa 133 ÷ 1333
- Deposition nonuniformity, % < 2,5
- Maximum generator power, W HF: 2000; LF: 1000
- Wafers heating temperature, ºС 400
- Operating pressure range, Pa 133 ÷ 1333
- Deposition nonuniformity, % < 2,5
- Maximum generator power, W HF: 2000; LF: 1000
- Wafers heating temperature, ºС 550
- Operating pressure range, Pa 2×104÷ 8×104
- Deposition nonuniformity, % < 2,5
Warranty and post-warranty service;
The possibility of upgrading and reconfiguring equipment to meet customer requirements.