CLUSTER Al RIE
3D
The cluster system is designed to carry out the processes of plasma chemical etching (ICP RIE) of metallization layers for the formation of metal wiring elements by plasma chemical etching of Al (aluminum) using a photoresistive mask on functional substrates.
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Specifications:
Possibility of integration into a clean room
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Yes
Wafer diameter
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200mm, 300mm
Wafer loading
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SMIF container
Цена действительна только для интернет-магазина и может отличаться от цен в розничных магазинах
CLUSTER Al RIE
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Specifications:
- The size of the processed substrates, up to Ø mm 200;
- The number of simultaneously loaded substrates 1;
- The maximum thickness of the etched metal (Al), up to microns 5;
- Etching rate of silicon, polysilicon, A/min 9000
- Selectivity of FR/AL 1: 2;
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Uneven etching, %:
- on the plate ±5
- from plate to plate ±2.5
- from reactor to reactor ±4
- Photoresist removal rate at 270℃, up to microns/min 3.5
- Operating pressure range for Al modules, Pa 1-10;
- Operating pressure range for FR removal modules , Pa 200-400;
Energy supply:
- Electric power consumption, kW, not more than 85;
- Voltage and frequency of the supply network, V, Hz 380, 50;
- Compressed air, overpressure, MPa 0.3 - 0.4
- Overall dimensions of the installation (WxDxH) mm 5000*4500*2200
- Installation weight, not more than kg 3500
Warranty and post-warranty service;
The possibility of upgrading and reconfiguring equipment to meet customer requirements.