Cluster PCE PolySi

Technological characteristics:

• The size of the processed substrates, up to Ø mm – 200;
• The number of simultaneously loaded substrates is 1;
• Etching rate of silicon, polysilicon, A/min– > 2000;
• Requirements for etching processes, microns:
  1. maximum thickness of poly etchback – 1
  2. maximum etching depth STI – 1
  3. maximum etching depth of trench contacts – 1
  4. the maximum etching thickness of the polysilicon gate is 0.5
• Selectivity:
  1. etching of silicon and polysilicon with respect to photoresist* – 15:1 at the main etching stage
  2. etching of silicon and polysilicon with respect to silicon oxide – 100:1 at the stage of overdrawing
• Uneven etching, %:
  1. along the plate – ±3
  2. from plate to plate**– ±2.5
  3. from reactor to reactor**– ±4
• Operating pressure range, Pa – 1-10;

Energy supply:

• Electric power consumption, kW, not more than – 85;
• Voltage and frequency of the supply network, V, Hz – 380, 50;
• Compressed air, overpressure, MPa – (0.3 - 0.4)
• Overall dimensions of the installation (WxDxH) mm – 5000*4500*2200
• Installation weight, not more than kg – 3500