CLUSTER TM-300 RIE
3D
The cluster system is designed for plasma chemical etching (RIE) with up to 65 nm design rules
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Specifications:
Possibility of integration into a clean room
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Yes
Wafer diameter
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200mm, 300mm
Wafer loading
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FOUP container, SMIF container
Developed with the support of the Russian Ministry of Industry and Trade in cooperation with MERI
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Цена действительна только для интернет-магазина и может отличаться от цен в розничных магазинах
CLUSTER TM-300 RIE
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Specifications:
- The size of the processed substrates, Ø mm 200, 300
- The number of simultaneously loaded substrates 1;
- Electrostatic clamp
- Availability of an endpoint detector
- Overall dimensions (WxDxH), mm 4570*4580*2500
- Etching rate, nm/min > 1000
- Maximum generator power, W Bias: 1000; Source: 2000
- Operating pressure range, Pa 0,5 ÷ 10
- Temperature range, ºС 5 ÷ 60
- Etching rate, nm/min > 250
- Maximum generator power, W Bias: 1000; Source: 2000
- Operating pressure range, Pa 0,5 ÷ 10
- Temperature range, ºС 5 ÷ 60
- Etching rate, nm/min > 300
- Maximum generator power, W Bias: 4000
- Operating pressure range, Pa 1,0 ÷ 30
- Temperature range, ºС 5 ÷ 60
- Etching rate, nm/min > 4000
- Maximum generator power, W Source: 6000
- Operating pressure range, Pa 50 ÷ 600
- Temperature range, ºС 100 ÷ 300
Warranty and post-warranty service;
The possibility of upgrading and reconfiguring equipment to meet customer requirements.